Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
نویسندگان
چکیده
We report extended analysis for measurement of generation lifetime and surface generation velocity, sg, on advanced gate stack with high-κ dielectric using leakage current characteristics in inversion condition. Proposed technique was examined on Ru/HfO2/Si MOS capacitor annealed in forming gas (90% N2 + 10% H2) at temperatures 430 and 510 °C. It was found that sg decreases with FGA temperature increasing, however, density of interface traps, Dit, unexpectedly increases after second FGA. The results are discussed together with capacitance vs. gate voltage measurement.
منابع مشابه
Improved Electrical Properties of Ge p-MOSFET With HfO2 Gate Dielectric by Using TaOxNy Interlayer
The electrical characteristics of germanium p-metal– oxide–semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about...
متن کاملThe Radiation Response of the High Dielectric-Constant Hafnium Oxide/Silicon System
We have explored the radiation response of the HfO2/Si system with a combination of capacitance versus voltage and electron spin resonance measurements on capacitor and bare oxide structures subjected to Co gamma irradiation and vacuum ultraviolet irradiation. Our studies have utilized both (100)Si and (111)Si substrate structures. Capacitors have been irradiated under both positive and negativ...
متن کاملStudy of Lanthanum incorporated HfO2 nano-scale high-κ dielectric using Pulse Laser Deposition for metal–insulator–metal capacitor applications
Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...
متن کاملMulti-level storage in a nano-floating gate MOS capacitor using a stepped control oxide
A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C–V hysteresis curves,...
متن کاملA New Model of Gate Capacitance as a Simple Tool to Extract MOS Parameters
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitance that takes into account both poly-Si depletion and charge quantization and includes temperature effects. A new fast and iterative procedure, based on this simplified self-consistent model, will be presented to estimate simultaneously the main MOS system parameters (oxide thickness, substrate, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2005